Applied surfactant Sb in GaInP of metamorphic Ge/InGaAs/GaInP triple-junction solar cells by MOCVD
博士 === 中原大學 === 物理研究所 === 103 === In this thesis, we studied the lattice-mismatch GaInP epilayers with surfactant antimony (Sb), which were grown on metamorphic (MM)-InGaAs buffer layers by low pressure metal organic chemical vapor deposition (MOCVD). The target is to obtain the GaInP epilayers with...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2015
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Online Access: | http://ndltd.ncl.edu.tw/handle/66567472056863172469 |