The Characterization of IGZO thin film with a high temperature annealing under different substrate and environment
碩士 === 中原大學 === 電子工程研究所 === 103 === Today, as far as the specifications of thin film transistors, the need of high carrier mobility, high on/off current ratio, good uniformity and low process temperature are concerned. However, the amorphous silicon and poly-silicon, still can’t meet these criteria...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41961139745832684773 |