Study on Data Retention of Single-sided NOI MOSFETs under High Temperature Channel Hot Electron Injection
碩士 === 中原大學 === 電子工程研究所 === 103 === Abstract In the semiconductor industry, non-volatile memory (NVM) applications are becoming extensive in various markets. For semiconductor devices development, the improvement of reliability characteristics plays an important role. In this work, we explore the in...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/sptpnv |
| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 103 === Abstract
In the semiconductor industry, non-volatile memory (NVM) applications are becoming extensive in various markets. For semiconductor devices development, the improvement of reliability characteristics plays an important role. In this work, we explore the interface state issues and reliability characteristics in single-sided Non-overlapped Implantation (SNOI) MOSFETs for NVM applications. In order to reduce number of charges inject into interface state, programming under the high temperature is used to improve data retention in SNOI devices. Based on the I-V measurements, the threshold voltage shift reflects the generation of both interface traps and trapped-oxide charge. The charge loss mechanisms are characterized for better understanding the data retention characteristics of the SNOI devices. Finally, the charge pumping measurement is used to show the difference between hot program method and normal program method in interface state recovery.
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