Investigations on Enhancement-Mode Al2O3-Dielectric AlGaN/GaN MOS-HFETs by Using Ozone Water Treatment
碩士 === 逢甲大學 === 電子工程學系 === 103 === In this thesis, AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) by using ozone water treatment technique are designed and investigated for a conventional HFET with the Schottky gate structure. A thin barrier structure was de...
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| Format: | Others |
| Language: | en_US |
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2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06834765151503644145 |