Electrical Performance of Single and Multiple P-Channel FinFETs under Different VT Implant Energies with Temperature Stress

碩士 === 明新科技大學 === 電子工程系碩士班 === 103 === Through the fabrication of fin field-effect transistors (FinFET), the IC products can be effectively promoted in the high density, the high performance and the low cost. In FinFET structure, it is similar to a 3-D profile with channel width providing the three-...

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Bibliographic Details
Main Authors: Lai, Yi-De, 賴益得
Other Authors: Wang, Mu-Chun
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/21358046977768014906