Electrical Performance of Single and Multiple P-Channel FinFETs under Different VT Implant Energies with Temperature Stress

• Main Authors: Lai, Yi-De, 賴益得
• Other Authors: Wang, Mu-Chun
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/21358046977768014906

碩士 === 明新科技大學 === 電子工程系碩士班 === 103 === Through the fabrication of fin field-effect transistors (FinFET), the IC products can be effectively promoted in the high density, the high performance and the low cost. In FinFET structure, it is similar to a 3-D profile with channel width providing the three-side controllability for the transistor device in switch, possibly reducing the current leakage and improving the short-channel effect. Using a set of 90nm photo masks with the mixing application of hard mask, the p-type FinFETs can be fabricated out. In this research, measuring the tested devices and extracting the feasible parameters as the fixed channel width (W=0.11um) to probe the impact of different channel-length devices are the main tasks. The single and multiple-channel FinFETs with different channel lengths (0.5um, 2um and 10um) under temperature stress (25oC, 75oC and 125oC) are interestingly discussed as the VT adjustment energies (20KeV and 15KeV) were various. Employing these previous parameters in process and layout, the difference of the whole device performance in drive current, sub-threshold swing and threshold voltage can be distinguished well. No matter what the single or multiple-channel p-type FinFET is, the smaller channel-length device shows the better drive current and the lower VT value than the larger one. In the higher VT implant energy, the drive current is higher due to the high contribution of the channel mobility. However, the lower VT implant energy proposes the lower VT value due to the lighter volume concentration in channel easily causing the channel inversion, but the scattering effect increases and the channel mobility decreases.