Doping Effects on Thermoelectric Properties of Semiconductor Cu3(Sb1-xMx)Se4 , M= Ti, Sn, Pb, and Ge
碩士 === 國立政治大學 === 應用物理研究所 === 103 === Cu3SbSe4 is a p-type semiconductor with a narrow band gap near 0.3 eV, and has been found to be a promising thermoelectric material at medium temperatures. The crystal structure of Cu3SbSe4 consists a three-dimensional [Cu3Se4] framework acting as electron hole...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/41130253359694047033 |