Explore intrinsically electrical characteristics of atomically thin SnS2 flake

碩士 === 國立中興大學 === 物理學系所 === 103 === Here, fakes made of a few layers of SnS2 were obtained by mechanical exfoliation of a semiconducting SnS2 bulk crystal grown by chemical vapor transport and then deposited on a heavily doped Si substrate covered with a 285-nm-thick SiO2 layer. The number of layers...

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Bibliographic Details
Main Authors: Che-Yi Lin, 林哲儀
Other Authors: 藍明德
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/57669934010113348197