Effects of CF4 Plasma Treatment on Characteristics of Enhancement Mode AlGaN/GaN High Electron Mobility Transistors
碩士 === 國立中興大學 === 精密工程學系所 === 103 === In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors. The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/52657953070001213397 |