Study on the Characteristics of Corona-Treated GaN-Based High Electron Mobility Transistor
碩士 === 國立中興大學 === 精密工程學系所 === 103 === This study evaluates the effect of corona discharge on metal oxide semiconductor capacitors and metal oxide semiconductor high electron mobility transistor(MOS-HEMT) devices.The structure of MOS capacitor consists of Al2O3/n-GaN/AlN buffer/silicon substrate.The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52745085037139812749 |