The study of TaOx-based rram bipolar resistive switching process by impedance spectroscopy

碩士 === 國立成功大學 === 材料科學及工程學系 === 103 === Abstract In this study, the resistance switching mechanisms of Ta/TaOx/Pt and Ta/TaOx/ITO devices are explored based on I-V sweeping curves, characteristic impedance and material characteristics. First, TEM is used to investigate the thickness of the device an...

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Bibliographic Details
Main Authors: Jiun-JieFang, 方駿杰
Other Authors: Jen-Sue Chen
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/63zyay