Investigation of AlGaN/GaN Complementary Metal-Oxide-Semiconductor High-Electron-Mobility Transistors Fabricated Using Photoelectrochemical Method and LiNbO3 Ferroelectric Film
碩士 === 國立成功大學 === 微電子工程研究所 === 103 === In this research, the complementary metal-oxide-semiconductor high-electron-mobility transistors (CMOS-HEMTs) were integrated with the AlGaN/GaN Enhancement-mode (E-mode) and Depletion-mode (D-mode) transistors. The AlGaN/GaN HEMTs with the polarization-induced...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/zupjee |