Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Liquid Phase Deposited Zirconium Oxide
碩士 === 國立成功大學 === 微電子工程研究所 === 103 === Conventional AlGaN/GaN high electron mobility transistors (HEMTs) are depletion-mode (D-mode) HEMTs due to the inherent two-dimensional electron gas (2DEG) induced by polarization effects. It is necessary to apply a negative gate bias to turn off a D-mode HEMT,...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bwk6ra |