Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors by Fluorine Plasma Treatment
碩士 === 國立成功大學 === 微電子工程研究所 === 103 === In this study, we have successively fabricated the enhancement-mode AlGaN/GaN HEMTs by fluorine plasma treatment techniques. The conduction band at the AlGaN/GaN interface is raised above the Fermi level as a result of the negatively charged fluorine ions incor...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/k999c6 |