Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors by Fluorine Plasma Treatment
碩士 === 國立成功大學 === 微電子工程研究所 === 103 === In this study, we have successively fabricated the enhancement-mode AlGaN/GaN HEMTs by fluorine plasma treatment techniques. The conduction band at the AlGaN/GaN interface is raised above the Fermi level as a result of the negatively charged fluorine ions incor...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2015
|
Online Access: | http://ndltd.ncl.edu.tw/handle/k999c6 |