Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors by Fluorine Plasma Treatment

Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors by Fluorine Plasma Treatment

碩士 === 國立成功大學 === 微電子工程研究所 === 103 === In this study, we have successively fabricated the enhancement-mode AlGaN/GaN HEMTs by fluorine plasma treatment techniques. The conduction band at the AlGaN/GaN interface is raised above the Fermi level as a result of the negatively charged fluorine ions incor...

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Bibliographic Details
Main Authors:	Che-YuanChang, 張哲源
Other Authors:	Yeong-Her Wang
Format:	Others
Language:	en_US
Published:	2015
Online Access:	http://ndltd.ncl.edu.tw/handle/k999c6

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