The Investigations and 3D Simulations of the Characteristics of Advanced HKMG Bulk FinFETs and SiGe Channels with High Mobility
博士 === 國立成功大學 === 電機工程學系 === 103 === For these years, according to ITRS roadmap, the size of device keeps scaling. It comes to nanodevice’s generation, each step of process technology has become more complicated, and this is based on more breakthrough of technology. If we want to keep scaling based...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/afyf39 |