Source/Drain and Contact Engineering for Ge MOSFETs
碩士 === 國立暨南國際大學 === 電機工程學系 === 103 === There are two sections of this thesis. First, we used the monolayer doping to form an ultra shallow junction with no damage on the germanium substrate. Second, we used the low work function metal element, ytterbium, to form the metal germanide. We expected to r...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69314899495336797347 |