Low vacuum, room temperature radio frequency-plasma enhanced pulsed laser deposition of Indium Gallium Zinc Oxide (IGZO) thin film

• Main Authors: Chih-Chang Lai, 賴志昌
• Other Authors: 蕭桂森
• Format: Others
• Language: zh-TW
• Published: 2015
• Online Access: http://ndltd.ncl.edu.tw/handle/99527021620468227353

碩士 === 國立暨南國際大學 === 光電科技碩士學位學程在職專班 === 103 === This research is using the Pulsed Laser Deposition Thin Film and Radio Frequency Plasma Laser Deposition to conduct oxygen flow quantity and processing power to control the deposition of IGZO thin film and to discuss the structure, morphology, characteristics and the electrical property of the IGZO thin film; utilizing 1:1:1 mole% as the IGZO Target material to prepare the IGZO thin film to deposit on the base material. The experiment is using X-ray diffraction to analyze the crystal structure of the thin film and to conduct its property analysis. Field Emission Scanning Electron Microscope and Electron Spectroscopy for Chemical Analysis were used to analyze the surface morphology, thickness, element qualitative and quantitative analysis, and the electrical property analysis. SEM analysis result is showing that under the same oxygen partial pressure (150mtorr), RF-PLD deposition thin film homogeneity is significantly better than PLD deposition. Oxygen partial pressure needs to be increased up to 100/150 mtorr to have bigger crystal particles for PLD thin film, but the crystal particles have minor difference for RF-PLD thin film under different oxygen partial pressure at 10 / 50 / 100 /150 mtorr. RF-PLD deposition film thickness is better than PLD at XRD Result Peak 33°. There is no obvious difference for RF-PLD deposition film thickness by increasing XRD Peak. Under the same oxygen partial pressure W/RF V.S. W/O RF, the element quantities do not have obvious difference. RF-PLD deposition film thickness horizontal component of electric field has the best electrical property under Si wafer with oxygen partial pressure of 150mtorr. For filming region performance, the filming region does not have obvious difference by increasing the RF Power, but filming region is observed to have wider range by increasing the oxygen partial pressure from 10mtorr to 150 mtorr.