The Study of La2O3/HfO2 GaN MOS-HEMT for High Power Application
碩士 === 國立交通大學 === 光電系統研究所 === 103 === In recent years, AlGaN/GaN high electron mobility transistors (HEMTs) have been widely studied for high power applications. However their performance and reliability are limited by the gate leakage current and drain current degradation. The utilization of in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05521736013009704108 |