Effect of plasma treatment on the radiation hardness of the HfO2/Si interfacial layer
碩士 === 國立交通大學 === 工學院加速器光源科技與應用碩士學位學程 === 103 === Extreme ultraviolet lithography (EUVL) is the most likely selection as the next generation lithography technology in the future. The radiation damage effect during exposing process should be considered because the energy of EUV is higher than chemica...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07356723598733177493 |