Interface Improvements of a-InGaZnO TFTs by Introducing a Double Active Layer Structure
碩士 === 國立交通大學 === 光電工程研究所 === 103 === a-IGZO has been demonstrated successfully as the active layer in TFTs, but the electrical reliability of a-IGZO TFTs still have some issues needs to be concerned. The method about reducing interface defect of a-IGZO TFTs have rarely been reported. Therefore, a d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15468614840193845534 |