Mechanism of hysteresis for a-IGZO TFT studied by changing the gate voltage waveform in measurement
碩士 === 國立交通大學 === 光電工程研究所 === 103 === The amorphous indium-gallium-zinc-oxide thin-film transistors can be expected to be applied in the transparent electronics, organic light emission displays and photo sensor for its many advantages. However, the phenomenon of hysteresis is a critical issue in the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/49836358225103541797 |