Design, Epitaxial Growth, Characterization and Applications of Nanoscale III-Nitride Light-Emitting Devices with High Performance
博士 === 國立交通大學 === 光電工程研究所 === 103 === Recently, III-nitride materials have been regarded as one of the most promising materials for developing highly efficient optoelectronic devices because their wide range of direct bandgaps covers the emission wavelength from deep ultraviolet (UV) to infrared (IR...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6p74nf |