Low-k SiCxNy Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Single-Precursor with High Carbon Content
碩士 === 國立交通大學 === 材料科學與工程學系所 === 103 === This thesis work examined the properties of silicon carbonitride (SiCxNy) films for application as the low-k etch-stop layer (ESL) in copper interconnects. Due to the downscaling of feature size, the lowering of effective dielectric constant (keff) is neede...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16271628659553193919 |