Kinetics of Switching Behaviors and Conducting Mechanisms for Resistive Random Access Memory
博士 === 國立交通大學 === 材料科學與工程學系所 === 103 === Non-volatile resistive random-access memory (RRAM) is consider to be a promising candidate to replace flash memory as a new generation of nano-memory. Because RRAM shows outstanding performance and potential for market opportunities, such as low operating vol...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04705759608173051191 |