Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In this thesis, we presented electrical characteristics of trapezoidal shaped channel for the junctionless (JL) bulk and silicon-on-insulator (SOI) FinFET are numerically explored by using 3D quantum-corrected device simulation. The dependence of device per...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4acdu6 |