Explorations on Long-Range Coulomb Interactions in Bulk Silicon
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === Driven by Moore’s law, the channel length of silicon MOSFETs has been aggressively scaled to nanometer region in the past decades, and will enter 5-nm technology node in the next years. In this situation, the generated potential fluctuations in the highly-d...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17399127152595175396 |