The Study on Electrical and Chemical Characteristics of Indium Gallium Arsenide MOSFETs with Self-Aligned Nickel S/D
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In this thesis, we successfully fabricated nickel indium gallium arsenide alloy by post metal annealing (PMA) at 250 C in N2 for 1 min. Moreover, the sheet resistance of Ni-InGaAs was lower than InGaAs doped with n-type. The Shottcky barrier height for ele...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78104947698697152785 |