A Study on High Quality Metal-Insulator-Germanium Capacitor Using Al-based Interfacial Layer
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In this thesis, the diffusion coefficients of Ge in AlN and Al2O3 were extracted. Both materials have ability to be diffusion barriers for avoiding Ge atoms diffusion from the substrate into gate dielectric in thermal process effectively. Then, germanium...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18043910764962046049 |