O xygen Modulation, Rapid Thermal Annealing, and Element Doping Effects on an Indium-Gallium-Zinc-Oxide Thin-Film Transistor
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === In recent years, numerous scientists and firms have worked to develop novel material research for greater performances and more applications in thin-film transistor (TFT) technology. They hope they can make a breakthrough in novel material development for i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/y522ng |