Development and Electrical Investigation of Fine-Pitch Cu/Sn Pad Bonding Using Ultra-Thin Buffer Layer Technique in 3D Integration
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 103 === A fine-pitch submicron Cu/Sn bonding scheme has been successfully developed to realize hyper integration. By inserting an ultra-thin buffer layer, near sub-micron thickness Cu/Sn pad bonding in wafer level can be achieved. Four kinds of ultra-thin buffer la...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50914110486189747188 |