The study of morphology and etching mechanism on N-face Phosphoric acid treatment free-standing GaN
碩士 === 國立交通大學 === 電子物理系所 === 103 === In this work, we study the morphology and etching mechanism on N-face phosphoric acid treatment free-standing GaN. It’s well known that phosphoric acid is good solution to recognize the surface defect on Ga-polar GaN, but it seldom used for removing native oxide...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64647762842534185471 |