High Mobility of Low Temperature GaN Grown by Two Heater MOCVD

碩士 === 國立交通大學 === 電子物理系所 === 103 === In this theses, we use the home-made two heater MOCVD reactor to grow low-growth temperature GaN thin films at 850℃. The electrical and optical properties of the samples were investigated by Hall, Temperature dependent Hall, X-ray diffraction and photoluminescenc...

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Bibliographic Details
Main Authors: Lin, Chih-Wei, 林智偉
Other Authors: Chen, Wei-Kuo
Format: Others
Language:zh-TW
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/31349271360461005870