Effect of E-field on oxide in NAND Flash memory retention
碩士 === 國立交通大學 === 電信工程研究所 === 103 === Data retention characteristics of program state is different from erase state. There is evident dependence on E-field on oxide for retention test. Through new method can extract the amount of floating gate charge apart from oxide trapped charge by bake. Furthe...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/sc6d27 |