Effect of E-field on oxide in NAND Flash memory retention

• Main Authors: Chen, Hsuan-Tse, 陳玄澤
• Other Authors: Watanabe, Hiroshi
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/sc6d27

碩士 === 國立交通大學 === 電信工程研究所 === 103 === 　　Data retention characteristics of program state is different from erase state. There is evident dependence on E-field on oxide for retention test. Through new method can extract the amount of floating gate charge apart from oxide trapped charge by bake. Furthermore, we can analyze the process of oxide trapped charge shift at different E-field on oxide by bake. When memory cell is at program state before bake, electron detrap should be the main process. When memory cell is at erase state before bake, hole detrap should be the main process. Thus, as a possible model, at erase state for higher E-field on oxide more hole are trapped to oxide near silicon surface.