Resistive Switching Characteristics of Co-doped ZnO Transparent Resistive Random Access Memory
碩士 === 國立交通大學 === 電機資訊國際學程 === 103 === In this thesis, various Cobalt doped Zinc oxide (Co: ZnO) thin film as a resistive switching layer for transparent resistive switching random access memory (T-RRAM) devices was investigated. The influence of Co doping concentrations (0, 2 and 5 mol%) on structu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84615410656940555687 |