Resistive Switching Characteristics of Co-doped ZnO Transparent Resistive Random Access Memory
碩士 === 國立交通大學 === 電機資訊國際學程 === 103 === In this thesis, various Cobalt doped Zinc oxide (Co: ZnO) thin film as a resistive switching layer for transparent resistive switching random access memory (T-RRAM) devices was investigated. The influence of Co doping concentrations (0, 2 and 5 mol%) on structu...
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84615410656940555687 |
| Summary: | 碩士 === 國立交通大學 === 電機資訊國際學程 === 103 === In this thesis, various Cobalt doped Zinc oxide (Co: ZnO) thin film as a resistive switching layer for transparent resistive switching random access memory (T-RRAM) devices was investigated. The influence of Co doping concentrations (0, 2 and 5 mol%) on structural and electrical properties of Co-doped ZnO T-RRAM have been studied. Co doped Zinc Oxide was synthesized using oxide mixing and calculation methods to fabricate sputter target. X-ray diffraction analysis indicated that the undoped and doped ZnO and Co: ZnO thin film has a hexagonal wurtzite structure with (002) preferential orientation crystalline nature. The maximum average crystallite size of Co: ZnO were 55.47 nm at a concentration of 2%, indicating that the crystallinity of doped powders were improved after doping. Approximately 38 nm thick of Co: ZnO films were deposited on the ITO / glass substrate using RF-magnetron suppter. ITO top electrode was deposited in order to fabricate sandwich structures. The optical transmittance exhibits that all undoped and doped devices are fully transparent (approximately 85% in the visible wavelength region) and demonstrate bipolar switching behavior. Resistive switching performance was enhanced after doping 2 mol% of Co. Good endurance of 4500 DC stable switching cycles with a resistance ratio of HRS/LRS about 20 times are achieved at a low operating voltage and data retention up to 104 sec in room temperature have achieved. The conduction mechanism of Co: ZnO RRAM was also discussed. These results indicate that Co: ZnO resistive layer is a promising candidate for the transparent resistive switching device. It has good potential for next generation non-volatile applications and as an embedded in transparent electronic devices.
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