Electro-Thermal Simulation and Heat Dissipation Analysis of Packaged GaN Power-HEMT Devices
碩士 === 國立交通大學 === 機械工程系所 === 103 === AlGaN/GaN high electron mobility transistors（HEMTs）are one of the prospective candidates for high switching frequency power electronics applications thanks to its wide band gap（3.4eV）, high breakdown voltage, large critical electric field, high carrier mobility,...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80245632143150963673 |