The growth of GaN nanodots on Si(111) by droplet epitaxy
碩士 === 國立交通大學 === 影像與生醫光電研究所 === 103 === GaN nanodots（NDs）were fabricated on Si（111）substrates by droplet epitaxy using Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) system. In ultra-high vacuum condition, Ga metallic droplets formed, and then became GaN NDs by nitridation process. The density of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71993414726785287993 |