Precise control over Ge quantum dot migration and placement via cooperative interaction of Germanium/Silicon/Oxygen for quantum tunneling devices
博士 === 國立中央大學 === 電機工程學系 === 103 === This thesis investigates a cooperative mechanism that involves the participation and interaction of Si, Ge and oxygen interstitials for precise numbering and placing Ge quantum dots (QDs). First, using the method, selective oxidation of Si atoms then formation of...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11862219999089085606 |