Precise control over Ge quantum dot migration and placement via cooperative interaction of Germanium/Silicon/Oxygen for quantum tunneling devices
博士 === 國立中央大學 === 電機工程學系 === 103 === This thesis investigates a cooperative mechanism that involves the participation and interaction of Si, Ge and oxygen interstitials for precise numbering and placing Ge quantum dots (QDs). First, using the method, selective oxidation of Si atoms then formation of...
Main Authors: | Kuan-hung Chen, 陳冠宏 |
---|---|
Other Authors: | Pei-Wen Li |
Format: | Others |
Language: | en_US |
Published: |
2015
|
Online Access: | http://ndltd.ncl.edu.tw/handle/11862219999089085606 |
Similar Items
-
Placement of Ge quantum dots in silicon nitride substrate and realization of Ge quantum dots visible-light photo-diodes
by: Yu-Jui Chang, et al.
Published: (2011) -
SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS
by: A. V. Mudryi, et al.
Published: (2015-04-01) -
Intensity of Radiative Recombination in the Germanium/Silicon Nanosystem with Germanium Quantum Dots
by: Sergey I. Pokutnyi, et al.
Published: (2021-03-01) -
Formation of germanium quantum dots by GeH4-UHV-CVD
by: Po-Yuan Tseng, et al.
Published: (2005) -
Germanium Quantum Dots and Bulk Germanium Photodetector
by: Chieh-Chun Chang, et al.
Published: (2006)