Fabrication and characterization of Germanium quantum dot-gated photoMOSFET
碩士 === 國立中央大學 === 電機工程學系 === 103 === In this thesis, Germanium quantum dots (Ge QDs) which individually surrounded SiO2 were formed by using selective oxidation of poly-crystalline SiGe pillars over the Si3N4 layer on the Si-substrate and then Ge QDs would burrowed into Si3N4 and eventually touc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70805922077130062511 |