Optimization and Characterization of Germanium Quantum Dots Phototransistors

碩士 === 國立中央大學 === 電機工程學系 === 103 === In this thesis, we generated a high quality germanium quantum dots (Ge QDs) by selective oxidation of SiGe nano-pillar / Si3N4 / Si substrates as the light absorption layer with high efficiency at long wavelength , and manufactured the Ge QDs phototransistors tha...

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Bibliographic Details
Main Authors: Shih-Yuan Hung, 洪士淵
Other Authors: Pei-wen Li
Format: Others
Language:en_US
Published: 2015
Online Access:http://ndltd.ncl.edu.tw/handle/14439582353019211361