Growth of InGaN Light-Emitting Diodes by Metal-Organic Vapor Phase Epitaxy
博士 === 國立中央大學 === 光電科學與工程學系 === 103 === The epitaxial layer of InGaN-based light-emitting diodes (LEDs) still contain a high defect density (around 108－1010 cm-2) and large strain-induced piezoelectric field due to the large lattice mismatch and the difference in thermal expansion coefficients of Ga...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02005784314033622653 |