Investigation of the low stress TEOS SiO2 films by low temperature PECVD processing
碩士 === 國立中央大學 === 光電科學與工程學系 === 103 === Tetra-ethyl-ortho-silicate (TEOS) SiO2 thin films were deposited using low temperature Plasma-enhanced chemical vapor deposition (PECVD) to achieve the performances of low stress and high density. Several process parameters including working pressure, O2 flow...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61098062573600876958 |