| Summary: | 碩士 === 國立中央大學 === 光機電工程研究所 === 103 === In the 1985, scientist Uhlir firstly discovered the layer with porous when he working electrolytic polishing on the surface of silicon substrate. The process of the porous surface on P-type silicon relied on the electrochemical methods such as the conformation of holes in the anode reaction and the chemical reaction between hydrofluoric acid electrolyte and the silicon surface. While the reaction between hydrofluoric acid electrolyte and the silicon surface need to apply the appropriate voltage to trigger off the electrochemical reaction.
For the variously electrochemical properties of porous silicon, it is widely used in many fields, including the semiconductor industry, micro-electromechanical systems, solar cells, photovoltaic components and sensors…etc. Particularly, how to improve the efficiency of the etching, shorten the process time and reduce the cost of process were attended. This study focus on the experiments for P-type silicon that using the irradiation of laser power with 0.5mW, 1.0mW, 2.0mW, respectively, and the given current was 100mA for 30 minutes of etching time. The wafers with electrochemical etching were scanned on the field emission scanning electron microscope (FE-SEM) to analyze the specimens, and explain the experimental results for the activation energy equation by Arrhenius.
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