Spontaneous p-type GaN grown on a ZnO buffer layer
碩士 === 國立中央大學 === 照明與顯示科技研究所 === 103 === The spontaneous p-type GaN grown on a ZnO buffer holds great promise for the realization of p-side-down light emitting diodes (LEDs), which are not achievable with convention growth techniques because of the memory effect of Mg ions (the most commonly used ac...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00042767113309356140 |