Interfacial electronic structure of silver on p-GaAs(001)2x4 : A Schottky-barrier-height study

碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 103 === Using high-resolution synchrotron-radiation photoemission, we have studied evolution of the interfacial electronic properties of Ag on a p-GaAs(001)2x4 surface. The photoelectron spectra show that in the initial deposition, Ag is located on top of the A...

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Bibliographic Details
Main Author: 陳婉馨
Other Authors: 鄭秋平
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/09893217408200761717