Epitaxial quality of GaN layer grown on c-sapphire substrate by plasma-assisted molecular beam epitaxy
碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 103 === We investigated the characteristic of GaN grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy. Growth procedure, substrate temperature and process time were varied in this study. The microstructure and surface morphology of the epilayers were...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/65584869873345458386 |