The growth of gallium nitride on Si(111) by Plasma-Assisted Molecular Beam Epitaxy
碩士 === 國立東華大學 === 材料科學與工程學系 === 103 === In this thesis, the heterostructure GaN nanorods and nanocolumns material were grown on p-type Si (111) substrate by Plasma-Assisted Molecular Beam Epitaxy (PA-MBE). According to the results of Field Emission Scanning Electron Microscopy (FE-SEM), Reflection H...
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| Format: | Others |
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2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96656942385444979539 |